1/10 july 2002 stD7NB20 stD7NB20-1 n-channel 200v - 0.3 w - 7a dpak/ipak powermesh? mosfet n typical r ds (on) = 0.3 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized n add suffix t4 for ordering in tape & reel description using the latest high voltage mesh overlay? process, stmicroelectronics has designed an ad- vanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprieraty edge termi- nation structure, gives the lowest r ds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. applications n swith mode power supplies (smps) n dc-dc converters for telecom, industrial, and lighting equipment absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d stD7NB20 stD7NB20-1 200 v 200 v < 0.40 w < 0.40 w 7 a 7 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 200 v v dgr drain-gate voltage (r gs = 20 k w ) 200 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 7a i d drain current (continuos) at t c = 100c 5a i dm ( l ) drain current (pulsed) 28 a p tot total dissipation at t c = 25c 55 w derating factor 0.44 w/c dv/dt (1) peak diode recovery voltage slope 5.5 v/ns t stg storage temperature C 65 to 150 c t j max. operating junction temperature 150 c (1) i sd 7a, di/dt 200 a/ m s, v dd v (br)dss , tj t jmax internal schematic diagram 1 3 to-252 dpak 3 2 1 ipak to-251 www.datasheet.co.kr datasheet pdf - http://www..net/
stD7NB20 / stD7NB20-1 2/10 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 2.27 c/w rthj-amb thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 275 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 7a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 100 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 3.5 a 0.30 0.40 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 3.5 a 23 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 470 650 pf c oss output capacitance 135 190 pf c rss reverse transfer capacitance 22 30 pf www.datasheet.co.kr datasheet pdf - http://www..net/
3/10 stD7NB20 / stD7NB20-1 thermal impedance electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 100 v, i d = 5 a r g = 4.7 w v gs = 10 v (see test circuit, figure 3) 10 14 ns t r rise time 15 20 ns q g total gate charge v dd = 160v, i d = 10 a, v gs = 10v 17 24 nc q gs gate-source charge 7.5 nc q gd gate-drain charge 5.5 nc symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 160v, i d = 10 a, r g =4.7 w, v gs = 10v (see test circuit, figure 3) 8 10 20 11 14 28 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 7 a i sdm (2) source-drain current (pulsed) 28 a v sd (1) forward on voltage i sd = 7 a, v gs = 0 1.5 v t rr reverse recovery time i sd = 10 a, di/dt = 100a/s v dd = 50v, t j = 150c (see test circuit, figure 5) 170 ns q rr reverse recovery charge 980 nc i rrm reverse recovery current 11.5 a safe operating area www.datasheet.co.kr datasheet pdf - http://www..net/
stD7NB20 / stD7NB20-1 4/10 capacitance variations transconductance static drain-source on resistance transfer characteristics output characteristics gate charge vs gate-source voltage www.datasheet.co.kr datasheet pdf - http://www..net/
5/10 stD7NB20 / stD7NB20-1 source-drain diode forward characteristics normalized on resistance vs temperature normalized gate threshold voltage vs temp. www.datasheet.co.kr datasheet pdf - http://www..net/
stD7NB20 / stD7NB20-1 6/10 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load www.datasheet.co.kr datasheet pdf - http://www..net/
7/10 stD7NB20 / stD7NB20-1 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o8o d 2 pak mechanical data 3 www.datasheet.co.kr datasheet pdf - http://www..net/
stD7NB20 / stD7NB20-1 8/10 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e www.datasheet.co.kr datasheet pdf - http://www..net/
stD7NB20 / stD7NB20-1 9/10 tape and reel shipment (suffix t4)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters www.datasheet.co.kr datasheet pdf - http://www..net/
stD7NB20 / stD7NB20-1 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com www.datasheet.co.kr datasheet pdf - http://www..net/
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